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Title:
SILICON POLISHING METHOD AND COMPOSITION FOR SILICON POLISHING
Document Type and Number:
WIPO Patent Application WO/2023/190604
Kind Code:
A1
Abstract:
Provided is a silicon polishing method and a polishing fluid 26 with which polishing efficiency is achieved. When a polishing pad 18 that is a polishing abrasive grain-including polishing pad including polishing abrasive grains 36 is used to polish a workpiece (silicon wafer) 16 while a polishing fluid (composition for silicon polishing) 26 that does not include polishing abrasive grains is supplied, due to the polishing fluid 26 including an organic amine and water and the pH of the polishing fluid 26 being 10.6-12.8, the reactivity of the silicon is increased under the strong alkalinity from the organic amine, and thus a high polishing efficiency is achieved.

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Inventors:
SATO MAKOTO (JP)
KISHIMOTO MASATOSHI (JP)
Application Number:
PCT/JP2023/012682
Publication Date:
October 05, 2023
Filing Date:
March 28, 2023
Export Citation:
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Assignee:
NORITAKE CO LTD (JP)
International Classes:
H01L21/304; B24B37/00
Foreign References:
JP2004025415A2004-01-29
JP2006093655A2006-04-06
JP2002231669A2002-08-16
Attorney, Agent or Firm:
IKEDA Haruyuki et al. (JP)
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