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Title:
SILICON PURIFICATION METHOD AND SILICON PURIFICATION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2011/034172
Kind Code:
A1
Abstract:
Disclosed is a silicon purification method, wherein a silicon purification apparatus comprising at least a plasma torch and a crucible that is filled with silicon metal is used and the silicon metal is purified by injecting a plasma gas from the plasma torch toward the melt surface of the silicon metal in the crucible, while setting the angle between the plasma gas injected from the plasma torch and the melt surface of the silicon metal to 20-80 degrees (inclusive).

Inventors:
OOKUBO YASUO (JP)
NAGATA HIROSHI (JP)
Application Number:
PCT/JP2010/066209
Publication Date:
March 24, 2011
Filing Date:
September 17, 2010
Export Citation:
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Assignee:
ULVAC INC (JP)
OOKUBO YASUO (JP)
NAGATA HIROSHI (JP)
International Classes:
C01B33/037
Foreign References:
JPH06115922A1994-04-26
JP2002029727A2002-01-29
JPH0748114A1995-02-21
JPH05139713A1993-06-08
JP2009136907A2009-06-25
JP2009217117A2009-09-24
JP2009217118A2009-09-24
JP2009217119A2009-09-24
JPH10203813A1998-08-04
JP2004125246A2004-04-22
Other References:
JOURNAL OF THE JAPAN INSTITUTE OF METALS, vol. 67, no. 10, 2003, pages 583 - 589
See also references of EP 2479144A4
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
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