Title:
SILICON SOLAR CELL AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2012/144420
Kind Code:
A1
Abstract:
This silicon solar cell reduces absorption loss in an n-type silicon layer and ZnO, or similar, which is a transparent electrode, and has increased photoelectric current and improved efficiency. A silicon solar cell is formed by forming, on a substrate, a cell layer having at least one unit cell formed from a p-type silicon layer, an i-type silicon layer and an n-type silicon layer, and forming an electrode layer on one surface of the substrate-side of the cell layer and forming a facing electrode on one surface of the cell layer which faces the substrate. The silicon solar cell is characterised in that: a sheet layer containing i-type microcrystalline Si:H is provided between the i-type silicon layer and the n-type silicon layer, said sheet layer having a film thickness of 1-500nm and a crystallinity of at least 40%; the n-type silicon layer contains n-type SixM1-x:H (M is O, N or C, 0
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Inventors:
KONAGAI MAKOTO (JP)
Application Number:
PCT/JP2012/060044
Publication Date:
October 26, 2012
Filing Date:
April 12, 2012
Export Citation:
Assignee:
TOKYO INST TECH (JP)
KONAGAI MAKOTO (JP)
KONAGAI MAKOTO (JP)
International Classes:
H01L31/04
Domestic Patent References:
WO2008078471A1 | 2008-07-03 |
Foreign References:
JP2001358350A | 2001-12-26 | |||
JP2010034411A | 2010-02-12 | |||
JP2010109279A | 2010-05-13 |
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
Aoki 篤 (JP)
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Claims:
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