SILICON THIN-FILM AND METHOD OF FORMING SILICON THIN-FILM

WIPO Patent Application WO/2007/145075

A1

[PROBLEMS] To provide a silicon thin-film that without damaging electronic devices mounted on a substrate and without extensive architecture of equipment, attains an enhancement of the adherence of silicon thin-film onto substrate and lowers the possibility of cracking or peeling, and provide a method of forming such a silicon thin-film. [MEANS FOR SOLVING PROBLEMS] There is provided a method of forming a silicon thin-film, in particular, a method of forming a silicon thin-film with insulating function or barrier function on substrate (K) according to the CVD technique, which method includes the steps of forming first thin-film (11) on the substrate (K) with the use of a gas containing hydrogen element and a gas containing silicon element according to the plasma CVD technique; forming second thin-film (12) with the use of a gas containing nitrogen element and a gas containing silicon element according to the plasma CVD technique; and forming third thin-film (13) with the use of a gas containing oxygen element and a gas containing silicon element according to the plasma CVD technique.

YAMASHITA MASAMITSU (JP)
IWADE TAKASHI (JP)
TAGUCHI KOHSHI (JP)
YAMAZAKI MITSUO (JP)

PCT/JP2007/060954

December 21, 2007

May 30, 2007

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TORAY ENG CO LTD (JP)
YAMASHITA MASAMITSU (JP)
IWADE TAKASHI (JP)
TAGUCHI KOHSHI (JP)
YAMAZAKI MITSUO (JP)

C23C16/42; B32B9/00; H01L51/50; H05B33/04; H05B33/10

JP2005166400A	2005-06-23
JP2002373778A	2002-12-26
JPH07161474A	1995-06-23
JP2006274390A	2006-10-12

TSUGAWA, Tomoo (7-7 Chuo 2-chome, Joto-k, Osaka-shi Osaka 05, JP)

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