SILICON WAFER MANUFACTURING METHOD AND SILICON WAFER

Title:

SILICON WAFER MANUFACTURING METHOD AND SILICON WAFER

Document Type and Number:

WIPO Patent Application WO/2005/124843

Kind Code:

A1

Abstract:

A method for manufacturing a silicon wafer from a silicon single crystal. In the silicon wafer manufacturing method, a double-plane polishing process wherein both planes of the wafer are mirror-polished, a heat treatment process wherein the mirror-polished wafer is heat treated, and a repolishing process wherein the front plane or the both planes of the heat treated water are repolished are at least performed on the wafer sliced from the silicon single crystal. Thus, the high-quality silicon wafer, which sufficiently ensures a COP free area and an oxygen precipitation free area, has no haze nor foreign material printed on the wafer front plane, and furthermore, has no contact mark with a jig on the wafer rear plane, can be manufactured.

Inventors:

KIMURA AKIHIRO (JP)

Application Number:

PCT/JP2005/010215

Publication Date:

December 29, 2005

Filing Date:

June 03, 2005

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)
KIMURA AKIHIRO (JP)

International Classes:

B24B37/08; C30B29/06; C30B33/00; H01L21/302; H01L21/304; H01L21/306; H01L21/322; H01L21/324; (IPC1-7): H01L21/304

Foreign References:

JP2004071836A	2004-03-04
JP2003257981A	2003-09-12
JP2001015459A	2001-01-19

Other References: