Title:
SILICON WAFER AND METHOD OF MANUFACTURE THEREOF
Document Type and Number:
WIPO Patent Application WO/2000/034553
Kind Code:
A1
Abstract:
A method of manufacturing a silicon wafer comprises a plurality of steps of polishing at least one side of a wafer, in which the last of the steps includes a heat treatment in a hydrogen-argon atmosphere using a device for heating and cooling suddenly. The method provides wafers with smooth surface free from distortion, scratches and slip dislocations, and productivity also increases.
Inventors:
KOBAYASHI NORIHIRO (JP)
AKIYAMA SHOJI (JP)
ABE TAKAO (JP)
AKIYAMA SHOJI (JP)
ABE TAKAO (JP)
Application Number:
PCT/JP1999/006732
Publication Date:
June 15, 2000
Filing Date:
December 01, 1999
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
KOBAYASHI NORIHIRO (JP)
AKIYAMA SHOJI (JP)
ABE TAKAO (JP)
KOBAYASHI NORIHIRO (JP)
AKIYAMA SHOJI (JP)
ABE TAKAO (JP)
International Classes:
C30B29/06; C30B33/00; C30B33/02; H01L21/302; H01L21/306; H01L21/322; (IPC1-7): C30B29/06; C30B33/12; H01L21/306
Foreign References:
| JPH07235534A | 1995-09-05 | |||
| EP0867928A2 | 1998-09-30 |
Other References:
See also references of EP 1052313A4
Attorney, Agent or Firm:
Yoshimiya, Mikio (Motoasakusa 2-chome Taito-ku Tokyo, JP)
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