Title:
SILICON WAFER POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/198583
Kind Code:
A1
Abstract:
The present invention is a silicon wafer polishing method, comprising: a first polishing step for bringing the surface of a silicon wafer held by a polishing head into sliding contact with a polishing cloth attached to a surface plate and polishing the surface of the silicon wafer while supplying an alkali aqueous solution containing abrasive grains to the polishing cloth; and a second polishing step for bringing the surface of the silicon wafer into sliding contact with the polishing cloth while supplying an alkali aqueous solution that contains a high-molecular polymer and does not contain abrasive grains to the polishing cloth. The silicon wafer polishing method is characterized in that the polishing of the silicon wafer is performed by controlling the surface temperature of the polishing cloth such that the surface temperature of the polishing cloth during the second polishing step is at least 2°C higher than the surface temperature of the polishing cloth during the first polishing step. Due to this configuration, provided is a silicon wafer polishing method capable of combining a high degree of flatness with a reduction in surface roughness.
Inventors:
TANAKA YUKI (JP)
KAMIHAMA NAOKI (JP)
KAMIHAMA NAOKI (JP)
Application Number:
PCT/JP2018/010367
Publication Date:
November 01, 2018
Filing Date:
March 16, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/304; B24B37/015
Domestic Patent References:
| WO2011135949A1 | 2011-11-03 |
Foreign References:
| JP2014180753A | 2014-09-29 | |||
| JPH09306881A | 1997-11-28 | |||
| JP2011042536A | 2011-03-03 | |||
| JP2016204187A | 2016-12-08 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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