Title:
SILICON WAFER THERMAL PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/208582
Kind Code:
A1
Abstract:
A thermal process is performed in a range in which a process temperature TS attained by a rapid thermal annealing and rapid cooling process device is not less than 1250°C and not more than 1350°C, and a temperature fall rate Rd from the process temperature is not less than 20°C/s and not more than 150°C/s. The process temperature TS and the temperature fall rate Rd are adjusted to lie in a range in which an upper limit of an oxygen partial pressure P in a thermal process atmosphere gas is P = 0.00207TS·Rd - 2.52Rd + 13.3 (expression (A)) and a lower limit of P is P = 0.000548TS·Rd - 0.605Rd - 0.511 (expression (B)).
Inventors:
MAEDA SUSUMU (JP)
BANBA HIRONORI (JP)
SUDO HARUO (JP)
OKAMURA HIDEYUKI (JP)
ARAKI KOJI (JP)
SUEOKA KOJI (JP)
NAKAMURA KOZO (JP)
BANBA HIRONORI (JP)
SUDO HARUO (JP)
OKAMURA HIDEYUKI (JP)
ARAKI KOJI (JP)
SUEOKA KOJI (JP)
NAKAMURA KOZO (JP)
Application Number:
PCT/JP2017/011721
Publication Date:
December 07, 2017
Filing Date:
March 23, 2017
Export Citation:
Assignee:
GLOBALWAFERS JAPAN CO LTD (JP)
International Classes:
H01L21/322; C30B33/02; H01L21/26
Foreign References:
| JP2011171414A | 2011-09-01 | |||
| JP2010212333A | 2010-09-24 | |||
| JP2005311200A | 2005-11-04 | |||
| JP2009524227A | 2009-06-25 | |||
| JP2007534579A | 2007-11-29 | |||
| JP2000091259A | 2000-03-31 | |||
| JPH04130732A | 1992-05-01 |
Other References:
TOMAS HALLBERG: "Enhanced oxygen precipitation in electron irradiated silicon", JOURNAL OF APPLIED PHYSICS, vol. 72, no. 11, 1992, pages 5130 - 5138, XP055438479
FALSTER R: "On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and W", PHYS STATUS SOLIDI B, vol. 222, 2000, pages 219 - 244, XP055438482
AKATSUKA M: "Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers", JPN. J. APPL. PHYS., vol. 40, 2001, pages 3055 - 3062, XP001078602
FALSTER R: "On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and W", PHYS STATUS SOLIDI B, vol. 222, 2000, pages 219 - 244, XP055438482
AKATSUKA M: "Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers", JPN. J. APPL. PHYS., vol. 40, 2001, pages 3055 - 3062, XP001078602
Attorney, Agent or Firm:
KAMADA Naoya et al. (JP)
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