Title:
SIMULATION METHOD AND SYSTEM BASED ON TCAD SIMULATION SYSTEM, STORAGE MEDIUM AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/002085
Kind Code:
A1
Abstract:
A simulation method and system based on a TCAD simulation system, and a storage medium and an electronic device. The simulation method comprises: obtaining actually-measured data of a device in an extremely low temperature range, the actually-measured data type being consistent with the simulation data type of a simulation model; modifying, in the TCAD simulation system, an equation parameter in the simulation model, wherein the numerical value of the modified equation parameter is not in the original value range; obtaining simulation data in the extremely low temperature range in the TCAD simulation system on the basis of the modified equation parameter and the simulation model; in response to the simulation data being consistent with the actually-measured data, obtaining a corrected simulation model on the basis of the equation parameter corresponding to the simulation data; and performing a simulation operation on the device in the extremely low temperature range on the basis of the corrected simulation model. The problem in the prior art that device simulation involving a traditional TCAD system at an extremely low temperature produces results that are inconsistent with the actual situation is solved.
Inventors:
LI SHUXIAO (CN)
Application Number:
PCT/CN2023/102834
Publication Date:
January 04, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
ORIGIN QUANTUM INSTR COMPANY (CN)
International Classes:
G06F30/367; G06F30/398
Foreign References:
| CN115238625A | 2022-10-25 | |||
| CN115238623A | 2022-10-25 | |||
| CN115238629A | 2022-10-25 | |||
| CN111680465A | 2020-09-18 | |||
| US20170103153A1 | 2017-04-13 |
Other References:
LU, TENGTENG: "Research on Modeling and Application of Electron Devices at Cryogenic Temperatures", WANFANG DATA, 22 June 2021 (2021-06-22)
LI, JINGXIN: "Study on the Single Event Effect of Sram Cell in Extremely Low Temperature Environment", INFORMATION SCIENCE AND TECHNOLOGY, CHINESE MASTER’S THESES FULL-TEXT DATABASE, no. 03, 15 March 2022 (2022-03-15), ISSN: 1674-0246
ZHANG, ZHENGLIANG: "Study of Radiation Effect on Mosfet and Ring Oscillator at Extremely Low Temperature", INFORMATION SCIENCE AND TECHNOLOGY, CHINESE MASTER’S THESES FULL-TEXT DATABASE, no. 03, 15 March 2022 (2022-03-15), ISSN: 1674-0246
LI, JINGXIN: "Study on the Single Event Effect of Sram Cell in Extremely Low Temperature Environment", INFORMATION SCIENCE AND TECHNOLOGY, CHINESE MASTER’S THESES FULL-TEXT DATABASE, no. 03, 15 March 2022 (2022-03-15), ISSN: 1674-0246
ZHANG, ZHENGLIANG: "Study of Radiation Effect on Mosfet and Ring Oscillator at Extremely Low Temperature", INFORMATION SCIENCE AND TECHNOLOGY, CHINESE MASTER’S THESES FULL-TEXT DATABASE, no. 03, 15 March 2022 (2022-03-15), ISSN: 1674-0246
Attorney, Agent or Firm:
VCAN IP LAW FIRM (CN)
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