Title:
SINGLE-CHIP MULTI-BAND LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2022/186593
Kind Code:
A1
Abstract:
A light-emitting diode according to one embodiment of the present disclosure comprises: an n-type nitride semiconductor layer; a V-pit formation layer disposed on the n-type nitride semiconductor layer and having V-pits; a sub-light-emitting layer disposed on the V-pit formation layer and having a plurality of well layers and a plurality of capping layers; an active layer disposed on the sub-light-emitting layer and having a first well region formed along a flat surface of the V-pit formation layer and a second well region formed in the V-pit of the V-pit formation layer; and a p-type nitride semiconductor layer disposed on the active layer, wherein an energy bandgap of the sub-light-emitting layer is greater than an energy bandgap of the first well region, and emits light of at least three different peak wavelengths at a single chip level.
Inventors:
BAEK YONG HYUN (KR)
MIN DAE HONG (KR)
KANG JI HUN (KR)
MIN DAE HONG (KR)
KANG JI HUN (KR)
Application Number:
PCT/KR2022/002925
Publication Date:
September 09, 2022
Filing Date:
March 02, 2022
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/08; H01L33/04; H01L33/24
Foreign References:
| KR20170063211A | 2017-06-08 | |||
| KR20160071780A | 2016-06-22 | |||
| KR20160072914A | 2016-06-24 | |||
| JP2015115343A | 2015-06-22 | |||
| US20200119228A1 | 2020-04-16 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
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