Title:
SINGLE CRYSTAL INGOT GROWING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2018/092985
Kind Code:
A1
Abstract:
The present invention relates to a single crystal ingot growing apparatus capable of precisely controlling volatilization of Ox on a surface of silicon melt by uniformly forming a flow rate of an inert gas flowing along the surface of the silicon melt. The present invention comprises: a crucible containing silicon melt; a heat shielding member installed so as to hang from an upper side of the crucible for cooling a single crystal ingot grown from the silicon melt of the crucible; a first flow path formed between an outer circumferential surface of the single crystal ingot and an inner circumferential surface of the heat shielding member, and in which an inert gas is vertically moved downward; and a second flow path formed between a lower end of the heat shielding member and an upper surface of the silicon melt, and in which the inert gas is horizontally moved outward, wherein the oxygen concentration in a single crystal is controlled according to the volume ratio of the second flow path to the first flow path.
Inventors:
KANG IN GU (KR)
SONG DO WON (KR)
LEE SUNG CHAN (KR)
JUNG HO SUB (KR)
SONG DO WON (KR)
LEE SUNG CHAN (KR)
JUNG HO SUB (KR)
Application Number:
PCT/KR2017/001864
Publication Date:
May 24, 2018
Filing Date:
February 20, 2017
Export Citation:
Assignee:
SK SILTRON CO LTD (KR)
International Classes:
C30B15/22; C30B15/10; C30B15/14; C30B29/06; C30B35/00
Foreign References:
| JPH09132496A | 1997-05-20 | |||
| KR100558156B1 | 2006-03-10 | |||
| JPH10167881A | 1998-06-23 | |||
| JP2015089854A | 2015-05-11 | |||
| JP2000203985A | 2000-07-25 |
Attorney, Agent or Firm:
KIM, Ki Moon (KR)
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