Title:
SINGLE PHOTON AVALANCHE DIODE, IMAGE SENSOR AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/077456
Kind Code:
A1
Abstract:
Provided are a single photon avalanche diode, an image sensor and an electronic device, which relate to the technical field of photoelectricity, and can improve the quantum efficiency of an SPAD while reducing jitter caused by lateral drift of an electronic carrier. The single photon avalanche diode comprises a semiconductor photoelectric conversion structure, wherein the semiconductor photoelectric conversion structure comprises a first doped region, a second doped region and a third doped region, which are arranged in sequence. The single photon avalanche diode further comprises a light trapping structure arranged in a light incident side of the third doped region, wherein the projection of the light trapping structure is located in the first doped region; and the light trapping structure comprises a middle recess structure and an edge recess structure, with the edge recess structure being located around the middle recess structure, and the depth of the edge recess structure being greater than the depth of the middle recess structure.
Inventors:
ZHANG JIAN (CN)
CAO JUNKAI (CN)
YU LIQIANG (CN)
LI YUNTAO (CN)
CHENG WENXUAN (CN)
CAO JUNKAI (CN)
YU LIQIANG (CN)
LI YUNTAO (CN)
CHENG WENXUAN (CN)
Application Number:
PCT/CN2020/121558
Publication Date:
April 21, 2022
Filing Date:
October 16, 2020
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L31/107
Foreign References:
| CN109659377A | 2019-04-19 | |||
| CN109659374A | 2019-04-19 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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