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Patent Searching and Data


Title:
SINGLE-PORT MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/070337
Kind Code:
A1
Abstract:
The present application relates to the technical field of storage. Provided is a single-port memory, which can solve the existing problem of the read speed of a single-port memory being slow. The single-port memory comprises storage units, which are distributed in an array, wherein each storage unit is connected to a read bit line and a read word line; the read bit line is connected to a pre-charging unit by means of a column selection unit; the read bit line is connected to an output end of a leakage current compensation unit by means of the column selection unit; and the read bit line is further connected to a control end of the leakage current compensation unit by means of a feedback circuit; and when determining that the level of the read bit line is lower than a first predetermined value, the feedback circuit outputs a feedback signal to the control end of the leakage current compensation unit, so as to stop the leakage current compensation unit charging the read bit line by means of the output end.

Inventors:
CAI JIANGZHENG (CN)
CHENG KUAN (CN)
BU MINGEN (CN)
ZHANG YUQING (CN)
Application Number:
PCT/CN2021/126524
Publication Date:
May 04, 2023
Filing Date:
October 26, 2021
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C5/14
Foreign References:
CN101110260A2008-01-23
CN110992998A2020-04-10
CN110600067A2019-12-20
CN101540188A2009-09-23
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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