Title:
SINGLE-TRANSISTOR STRUCTURE, MULTI-TRANSISTOR STRUCTURE, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/222573
Kind Code:
A1
Abstract:
The present application discloses a single-transistor structure, a multi-transistor structure, and an electronic apparatus. The single-transistor structure comprises: a substrate; a trench region, source region, and drain region which are located on the same side of the substrate, wherein the trench region has a first end and a second end which are opposite to each other in an extension direction, the source region electrically contacts the first end, and the drain region electrically contacts the second end; a gate which is located between the source region and the drain region, the gate surrounding a portion of the trench region, and an insulating layer being present between the trench region and a region opposite the gate; and a trench electrode, wherein the trench electrode electrically contacts the trench region exposed by the gate, the trench electrode and a portion of the trench region surrounded by the gate have an overlapping portion, and the trench electrode is insulated from the gate. By using the single-transistor structure or multi-transistor structure described in the technical solution of the present application, the area of an integrated circuit can be reduced, and the degree of integration is increased.
Inventors:
DAI MINGZHI (CN)
Application Number:
PCT/CN2022/075442
Publication Date:
October 27, 2022
Filing Date:
February 08, 2022
Export Citation:
Assignee:
NINGBO INST MATERIALS TECH & ENG CAS (CN)
International Classes:
H01L29/417; H01L27/088; H01L29/423; H01L29/78
Foreign References:
| CN112993040A | 2021-06-18 | |||
| US20060084211A1 | 2006-04-20 | |||
| CN108767015A | 2018-11-06 | |||
| US20130341733A1 | 2013-12-26 | |||
| CN111435682A | 2020-07-21 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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