SINTERED BODY TARGET AND METHOD FOR PRODUCING SINTERED BODY

Title:

SINTERED BODY TARGET AND METHOD FOR PRODUCING SINTERED BODY

Document Type and Number:

WIPO Patent Application WO/2010/137485

Kind Code:

A1

Abstract:

Disclosed is a sintered body target which is mainly composed of the element (A), the element (B) and the element (C) described below, and characterized by having a heat conductivity of not less than 2.5 W/mK and an oxygen concentration of not less than 5,000 ppm. (A) one or more chalcogenide elements selected from among S, Se and Te (B) one or more group Vb elements selected from among Bi, Sb, As, P and N (C) one or more group IVb or group IIIb elements selected from among Ge, Si, C, Ga and In Since the sputtering target has high heat conductivity and low electrical resistivity, heat accumulation and diffusion of volatile components are improved, thereby enabling stable DC sputtering. In addition, the sintered body target enables stable and high-speed sputtering by applying high electric power thereto.

Inventors:

TAKAHASHI HIDEYUKI (JP)

Application Number:

PCT/JP2010/058314

Publication Date:

December 02, 2010

Filing Date:

May 18, 2010

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP (JP)
TAKAHASHI HIDEYUKI (JP)

International Classes:

C23C14/34; H01C17/12

Domestic Patent References:

WO2009116213A1

2009-09-24

Foreign References:

JP4172015B2	2008-10-29
JP2005023350A	2005-01-27
JP2004311729A	2004-11-04
JPH11286773A	1999-10-19
JP2004323919A	2004-11-18

Other References: