SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM

Title:

SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM

Document Type and Number:

WIPO Patent Application WO/2011/148614

Kind Code:

A1

Abstract:

A sintered oxide material comprising an oxide of indium and an oxide of aluminum, wherein the atomic ratio Al/(Al+In) is 0.01 to 0.08.

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Inventors:

EBATA KAZUAKI (JP)
TOMAI SHIGEKAZU (JP)
YANO KOKI (JP)
INOUE KAZUYOSHI (JP)

Application Number:

PCT/JP2011/002873

Publication Date:

December 01, 2011

Filing Date:

May 24, 2011

Export Citation:

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Assignee:

IDEMITSU KOSAN CO (JP)
EBATA KAZUAKI (JP)
TOMAI SHIGEKAZU (JP)
YANO KOKI (JP)
INOUE KAZUYOSHI (JP)

International Classes:

C04B35/00; C23C14/34; H01L21/20; H01L21/203; H01L21/336; H01L21/363; H01L29/786

Domestic Patent References:

WO2010032431A1	2010-03-25
WO2010070944A1	2010-06-24
WO2010035715A1	2010-04-01

Foreign References:

JPH09152940A	1997-06-10
JP2002053952A	2002-02-19
JP2000169220A	2000-06-20
JP2007084842A	2007-04-05

Other References:

E. NISHIMURA ET AL.: "Microstructures of ITO films deposited by d.c. magnetron sputtering with H20 introduction", THIN SOLID FILMS, vol. 445, no. 2, 15 December 2003 (2003-12-15), pages 235 - 240

Attorney, Agent or Firm:

WATANABE, Kihei et al. (JP)
Kihei Watanabe (JP)

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