Title:
SIO2-SERIES HIGH-FREQUENCY LOW-DIELECTRIC LOW-TEMPERATURE CO-FIRED CERAMIC MATERIAL AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/188220
Kind Code:
A1
Abstract:
An SiO 2-series high-frequency low-dielectric low-temperature co-fired ceramic material and a preparation method therefor. The ceramic material is composed of, in percentages by weight, 30-50% of borosilicate glass, 30-55% of SiO 2 and 1-15% of a crystallization controlling additive, wherein the crystallization controlling additive is selected from at least one of a ZBS glass powder, ZrO 2, TiO 2, Y 2O 3, AlN and crystalline SiO 2. The ceramic material can be sintered at a temperature of 840-900ºC for compaction, the dielectric constant thereof is 4.0-4.5 at a high frequency of 10 GHz, and the dielectric loss thereof is less than 0.3%; and same can be widely used in the manufacturing of high-frequency components such as LTCC couplers, power dividers, antennas, filters, etc. By introducing the crystallization controlling additive, the polycrystal transformation of SiO 2 is effectively controlled, the problem of surface cracking of the ceramic is improved, and the reliability of the components is improved.
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Inventors:
YUAN YE (CN)
TONG JIANXI (CN)
SHI SHAN (CN)
ZHANG CAIXIA (CN)
LI JIN (CN)
XU HONGMEI (CN)
TONG JIANXI (CN)
SHI SHAN (CN)
ZHANG CAIXIA (CN)
LI JIN (CN)
XU HONGMEI (CN)
Application Number:
PCT/CN2021/084474
Publication Date:
September 15, 2022
Filing Date:
March 31, 2021
Export Citation:
Assignee:
JIAXING GLEAD ELECTRONICS CO LTD (CN)
International Classes:
C03B19/06; C03C10/14; C04B35/14
Foreign References:
| CN110256060A | 2019-09-20 | |||
| US5079194A | 1992-01-07 | |||
| CN102863221A | 2013-01-09 | |||
| CN106927792A | 2017-07-07 |
Attorney, Agent or Firm:
HANGZHOU FENGHE PATENT ATTORNEYS OFFICE CO., LTD (CN)
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