SOI WAFER MANUFACTURING METHOD - SHINETSU HANDOTAI KK

Title:

SOI WAFER MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2018/235548

Kind Code:

A1

Abstract:

The present invention provides an SOI wafer manufacturing method comprising a step of subjecting an SOI wafer to a sacrificial oxidation process for thickness-reduction adjustment of an SOI layer. The SOI wafer manufacturing method is characterized in that: the SOI wafer which is subjected to the sacrificial oxidation process has a one-side flow shaped film thickness distribution; thermal oxidation during the sacrificial oxidation process is performed using a vertical thermal processing furnace and by means of no-rotational oxidation and rotational oxidation in combination; a thermal oxidation film having a one-side flow shaped oxidation film thickness distribution is formed on a surface of the SOI layer so as to offset a film thickness distribution having a one-side flow shape of the SOI layer; and the thermal oxidation film that has been formed is removed to manufacture an SOI wafer having an SOI layer in which the one-side flow shaped film thickness distribution is eliminated. Thus, there is provided a method for manufacturing an SOI wafer comprising an SOI layer in which a film thickness distribution having a one-side flow shape is eliminated by subjecting an SOI wafer having a one-side flow shaped SOI layer film thickness distribution to a sacrificial oxidation process.

Inventors:

AGA HIROJI (JP)

Application Number:

PCT/JP2018/020640

Publication Date:

December 27, 2018

Filing Date:

May 30, 2018

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)

International Classes:

H01L21/02; H01L21/265; H01L21/324; H01L27/12

Foreign References:

JPH0750234A	1995-02-21
JP2007242972A	2007-09-20
JP2013125909A	2013-06-24
JP2016066692A	2016-04-28
JP2013125909A	2013-06-24
JP2016066692A	2016-04-28
JP2007242972A	2007-09-20

Other References: