Title:
SOLAR CELL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/146973
Kind Code:
A1
Abstract:
This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, is provided with: a semiconductor substrate wherein a p-type first semiconductor region and an n-type second semiconductor region are laminated so that the first semiconductor region is positioned closest to a first main surface and the second semiconductor region is positioned closest to a second main surface; and a first passivation film that contains aluminum and is arranged on the first main surface side of the first semiconductor region. In this solar cell element, the inner part of the first passivation film has a first ratio, which is a value obtained by dividing the atomic density of aluminum by the atomic density of oxygen, of 0.613 or more but less than 0.667 and a second ratio, which is a value obtained by dividing the sum of the atomic density of aluminum and the atomic density of hydrogen by the atomic density of oxygen, of 0.667 or more but less than 0.786.
Inventors:
MIYAMOTO KOUJI (JP)
AONO SHIGEO (JP)
HONJO TOMOFUMI (JP)
MIYAZAKI SHIRO (JP)
TANAKA MASAHIRO (JP)
NIIRA KOICHIRO (JP)
KUROBE KENICHI (JP)
AONO SHIGEO (JP)
HONJO TOMOFUMI (JP)
MIYAZAKI SHIRO (JP)
TANAKA MASAHIRO (JP)
NIIRA KOICHIRO (JP)
KUROBE KENICHI (JP)
Application Number:
PCT/JP2013/059174
Publication Date:
October 03, 2013
Filing Date:
March 28, 2013
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L31/068; H01L31/0216
Domestic Patent References:
| WO2011033826A1 | 2011-03-24 | |||
| WO2011145731A1 | 2011-11-24 |
Foreign References:
| JP2010171263A | 2010-08-05 | |||
| JP2009164544A | 2009-07-23 |
Other References:
B.HOEX: "Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited A1203", APPLIED PHYSICS LETTERS, vol. 89, no. 4, 2006, pages 042112, XP012088131
G.DINGEMANS: "Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD", 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, pages 003118 - 003121, XP031784231
See also references of EP 2833418A4
G.DINGEMANS: "Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD", 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, pages 003118 - 003121, XP031784231
See also references of EP 2833418A4
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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