Title:
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/065918
Kind Code:
A1
Abstract:
This invention provides a solar cell (10) comprising a passivation film (3),
provided on a surface of a silicon substrate (1), which has a high level of effect
on both p and n regions on the surface of the silicon substrate (1). Specifically,
in the solar cell (10), a first passivation film formed of a silicon nitride film
is provided on the silicon substrate (1) in its side remote from the light receiving
face. The first passivation film has a refractive index of not less than 2.6.
In the solar cell (10), preferably, a second passivation film including a silicon
oxide film and/or an aluminum oxide film is provided between the silicon substrate
(1) and the first passivation film. Further, the solar cell (10) is preferably
of a backside joint type in which pn junction is provided on the silicon substrate
(1) in its side remote from the light receiving face.
Inventors:
ISAKA TAKAYUKI
FUNAKOSHI YASUSHI
KOHIRA MASATSUGU
FUNAKOSHI YASUSHI
KOHIRA MASATSUGU
Application Number:
PCT/JP2007/072343
Publication Date:
June 05, 2008
Filing Date:
November 19, 2007
Export Citation:
Assignee:
SHARP KK (JP)
ISAKA TAKAYUKI
FUNAKOSHI YASUSHI
KOHIRA MASATSUGU
ISAKA TAKAYUKI
FUNAKOSHI YASUSHI
KOHIRA MASATSUGU
International Classes:
H01L31/04; C23C16/34; H01L31/0216
Foreign References:
| JPH10229211A | 1998-08-25 | |||
| JPH04296063A | 1992-10-20 | |||
| JP2002277605A | 2002-09-25 | |||
| JP2005019549A | 2005-01-20 | |||
| JP2006073617A | 2006-03-16 | |||
| JPH10229211A | 1998-08-25 |
Attorney, Agent or Firm:
FUKAMI, Hisao et al. (Nakanoshima Central Tower22nd Floor, 2-7, Nakanoshima,2-chome, Kita-ku, Osaka-shi, Osaka 05, JP)
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