Title:
SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND SOLAR POWER GENERATION SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/281760
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing: a production method for a solar cell having excellent conversion efficiency; a multi-junction solar cell; a solar cell module; and a solar power generation system. A solar cell according to an embodiment of the present invention is provided with: a p electrode; a p-type light absorbing layer which is located on the p electrode and which is formed mainly of cuprous oxide and/or a complex oxide of cuprous oxide; an n-type layer which is located on the p-type light absorbing layer and which contains an oxide containing Ga; and an n electrode which is located on the n-type layer. A first region is provided between the p-type light absorbing layer and the n-type layer. The first region is a region extending from a position which is at a depth of up to 2 nm on the n-type layer side from the interface between the p-type light absorbing layer and the n-type layer, to a position which is at a depth of 2 nm or less on the p-type light absorbing layer side from the interface between the p-type light absorbing layer and the n-type layer. The first region contains Cu, Ga, M1, and O. M1 represents at least one element selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. The ratio among Cu, Ga, M1, and O in the first region is a1:b1:c1:d1, and a1, b1, c1, and d1 satisfy 1.80≤a1≤2.20, 0.005≤b1≤0.05, 0≤c1≤0.20, and 0.60≤d1≤1.00, respectively.
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Inventors:
YAMAMOTO KAZUSHIGE (JP)
MIZUNO YUKITAMI (JP)
HONISHI YUYA (JP)
SHIBASAKI SOICHIRO (JP)
NAKAGAWA NAOYUKI (JP)
NISHIDA YASUTAKA (JP)
YAMAZAKI MUTSUKI (JP)
MIZUNO YUKITAMI (JP)
HONISHI YUYA (JP)
SHIBASAKI SOICHIRO (JP)
NAKAGAWA NAOYUKI (JP)
NISHIDA YASUTAKA (JP)
YAMAZAKI MUTSUKI (JP)
Application Number:
PCT/JP2021/026048
Publication Date:
January 12, 2023
Filing Date:
July 09, 2021
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORP (JP)
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORP (JP)
International Classes:
H01L31/072
Domestic Patent References:
| WO2019146120A1 | 2019-08-01 |
Foreign References:
| JP2017135261A | 2017-08-03 | |||
| CN109309136A | 2019-02-05 |
Other References:
CHUA DANNY; KIM SANG BOK; GORDON ROY: "Enhancement of the open circuit voltage of Cu2O/Ga2O3heterojunction solar cells through the mitigation of interfacial recombination", AIP ADVANCES, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 9, no. 5, 2 May 2019 (2019-05-02), 2 Huntington Quadrangle, Melville, NY 11747 , XP012237611, DOI: 10.1063/1.5096283
MINAMI TADATSUGU, NISHI YUKI, MIYATA TOSHIHIRO: "Heterojunction solar cell with 6% efficiency based on an n-type aluminum–gallium–oxide thin film and p-type sodium-doped Cu 2 O sheet", APPLIED PHYSICS EXPRESS, JAPAN SOCIETY OF APPLIED PHYSICS; JP, JP, vol. 8, no. 2, 1 February 2015 (2015-02-01), JP , pages 022301, XP055868523, ISSN: 1882-0778, DOI: 10.7567/APEX.8.022301
MINAMI TADATSUGU, NISHI YUKI, MIYATA TOSHIHIRO: "Heterojunction solar cell with 6% efficiency based on an n-type aluminum–gallium–oxide thin film and p-type sodium-doped Cu 2 O sheet", APPLIED PHYSICS EXPRESS, JAPAN SOCIETY OF APPLIED PHYSICS; JP, JP, vol. 8, no. 2, 1 February 2015 (2015-02-01), JP , pages 022301, XP055868523, ISSN: 1882-0778, DOI: 10.7567/APEX.8.022301
Attorney, Agent or Firm:
IKEGAMI, Tetsuma et al. (JP)
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