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Title:
SOLDER BONDING MEMBER, SEMICONDUCTOR DEVICE, SOLDER BONDING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/248302
Kind Code:
A1
Abstract:
The present invention provides a solder bonding member (4) for bonding a first object (2) and a second object (3) to each other, the solder bonding member (4) containing Sn as a main component, while containing not less than 3% by mass but less than 4% by mass of Ag, not less than 0.5% by mass but less than 1.0% by mass of Cu, not less than 2.5% by mass but less than 4% by mass of Bi and not less than 0.5% by mass but less than 3% by mass of Sb. This solder bonding member (4) has: a main phase (12) which contains Sn, Ag and Cu and has a melting point that is not less than 210°C but less than 220°C; an Sn-Bi alloy phase (10) which covers at least a part of the main phase (12) and has a melting point that is not less than 135°C but less than 145°C; and an Sn-Bi-Sb alloy phase (11) which covers at least a part of the Sn-Bi alloy phase (10) and has a melting point that is not less than 170°C but less than 180°C.

Inventors:
YAMAZAKI KOJI (JP)
Application Number:
PCT/JP2022/024565
Publication Date:
December 28, 2023
Filing Date:
June 20, 2022
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
C22C13/00; B23K35/14; B23K35/26
Domestic Patent References:
WO2010050185A12010-05-06
WO2021261486A12021-12-30
WO2018193760A12018-10-25
Foreign References:
JP2012081521A2012-04-26
JP2020157349A2020-10-01
JP2018181605A2018-11-15
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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