SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE

WIPO Patent Application WO/2022/201745

A1

A solid-state imaging device comprises a first semiconductor layer, a second semiconductor layer, and an external terminal. The first semiconductor layer has a pixel region in which a plurality of pixels are arranged and a peripheral region disposed around the pixel region. The second semiconductor layer is stacked on the first semiconductor layer, and pixel circuits connected to the pixels are disposed on the second semiconductor layer. The external terminal is disposed inside an opening leading from the peripheral region of the first semiconductor layer to the second semiconductor layer. A first separator and a second separator are disposed in the peripheral region in the solid-state imaging device. The first separator is disposed on the first semiconductor layer in the peripheral region and surrounds at least a portion of an area around the outside of the opening. The second separator is disposed on the second semiconductor layer in a region corresponding to the peripheral region and surrounds at least a portion of an area around the outside of the opening.

TOMITA CHIHIRO (JP)
ZAITSU KOICHIRO (JP)
TSUGAWA HIDENOBU (JP)
YAMAMOTO JUNPEI (JP)

PCT/JP2022/000527

September 29, 2022

January 11, 2022

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H01L21/3205; H01L21/768; H01L23/522; H01L27/146

WO2020262643A1

2020-12-30

JP2012033894A	2012-02-16
JP2020181953A	2020-11-05
JP2011114325A	2011-06-09
JP2012231027A	2012-11-22

TSUBASA PATENT PROFESSIONAL CORPORATION (JP)

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