Title:
SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/244302
Kind Code:
A1
Abstract:
This solid-state imaging device comprises a photoelectric conversion element that includes a first electrode, an electron transport layer, and a photoelectric conversion layer. The first electrode is provided over a substrate, and the photoelectric conversion layer is provided over the first electrode. The electron transport layer is provided between the first electrode and the photoelectric conversion layer, and has a buffer layer and a microparticle layer. The buffer layer has an ionization potential greater than the work function of the first electrode, and an electron affinity greater than that of the photoelectric conversion layer. The microparticle layer contains microparticles that contain electrically conductive zinc oxide as the main component.
Inventors:
OKABE YUTA (JP)
ENOKI OSAMU (JP)
TAKIZAWA SYUUITI (JP)
ENOKI OSAMU (JP)
TAKIZAWA SYUUITI (JP)
Application Number:
PCT/JP2022/001454
Publication Date:
November 24, 2022
Filing Date:
January 17, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L51/46; H01L27/146; H01L27/30; H01L51/42
Domestic Patent References:
| WO2020188959A1 | 2020-09-24 | |||
| WO2017081831A1 | 2017-05-18 |
Foreign References:
| US20150060773A1 | 2015-03-05 | |||
| JP2017098393A | 2017-06-01 | |||
| JP2016062997A | 2016-04-25 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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