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Title:
SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/270039
Kind Code:
A1
Abstract:
[Problem] To suppress noise. [Solution] A solid-state imaging device provided with: a photoelectric conversion portion for generating charge corresponding to an amount of received light; a transfer portion for transferring the charge generated by the photoelectric conversion portion; a charge storage portion for storing the charge transferred by the transfer portion; an amplifying transistor for amplifying a signal corresponding to the charge stored in the charge storage portion; and a separating portion for separating the photoelectric conversion portion. The amplifying transistor is provided in a depth direction from a first surface of the semiconductor layer, and includes a gate electrode including two vertical gate electrode portions disposed with a channel region sandwiched therebetween. The separating portion includes at least a first separating portion provided in a first groove portion provided in the depth direction from the first surface. An insulating layer disposed on a side of one of the two vertical gate electrode portions opposite the channel region is disposed so as to overlap at least a part of the first separating portion when viewed from the depth direction.

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Inventors:
NAKAMOTO YUTA (JP)
Application Number:
PCT/JP2022/010866
Publication Date:
December 29, 2022
Filing Date:
March 11, 2022
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146
Domestic Patent References:
WO2021010024A12021-01-21
Foreign References:
JP2017183636A2017-10-05
JP2013069846A2013-04-18
JP2006121093A2006-05-11
US20160118432A12016-04-28
JP2014096490A2014-05-22
JP2016039315A2016-03-22
JP2017168566A2017-09-21
US20160043120A12016-02-11
Attorney, Agent or Firm:
NAKAMURA Yukitaka et al. (JP)
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