Title:
SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/074157
Kind Code:
A1
Abstract:
Provided is a solid-state imaging device capable of matching the influence of incident light with respect to a light-blocking film between an image height center and a position at which the image height is raised. The solid-state imaging device comprises a semiconductor substrate having a plurality of pixels arranged in a matrix thereon. Each of the plurality of pixels comprises: a photoelectric conversion section for generating charge by photoelectric conversion based on light incident on a light-receiving surface of the semiconductor substrate; a charge storage section for storing the charge generated by the photoelectric conversion section; a transfer transistor including a vertical gate electrode reaching the photoelectric conversion section, the transfer transistor transferring the charge from the photoelectric conversion section to the charge storage section; and a light-blocking section formed by a trench disposed in a layer between the light-receiving surface and the charge storage section, the light-blocking section blocking entry into the charge storage section of light entering via the light-receiving surface. The amount of coverage of the light-blocking section with respect to the charge storage section is corrected in accordance with the image height at the position at which the pixels are disposed.
Inventors:
YOSHIBA IPPEI (JP)
Application Number:
PCT/JP2022/034098
Publication Date:
May 04, 2023
Filing Date:
September 12, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H04N25/70
Domestic Patent References:
| WO2019240207A1 | 2019-12-19 | |||
| WO2021112098A1 | 2021-06-10 | |||
| WO2020195825A1 | 2020-10-01 |
Foreign References:
| JP2016534557A | 2016-11-04 | |||
| JP2012169530A | 2012-09-06 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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