Title:
SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND CONTROL METHOD OF SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/239661
Kind Code:
A1
Abstract:
In this solid-state imaging element which transfers a charge to a floating diffusion layer, light exposure is initiated prior to charge transfer to the floating diffusion layer. A photodiode generates charge by means of photoelectric conversion. A charge storage unit stores charge. The floating diffusion layer converts a charge to a signal level corresponding to the amount of the charge. When a prescribed light exposure period has ended, an exposure end-time transfer transistor transfers the charge from the photodiode to the charge storage unit. When the exposure period has ended, a reset transistor initializes the voltage of the floating diffusion layer to a prescribed reset level. When a new exposure period is started after the aforementioned charge has been transferred to the charge storage unit, a discharge transistor discharges the newly generated charge in the photodiode. When the processing for converting the prescribed reset level to a digital signal has ended, a conversion end-time transistor transfers the charge from the charge storage unit to the floating diffusion layer.
Inventors:
KITANO SHIN (JP)
Application Number:
PCT/JP2019/010452
Publication Date:
December 19, 2019
Filing Date:
March 14, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H04N5/3745
Domestic Patent References:
| WO2016136486A1 | 2016-09-01 | |||
| WO2016136448A1 | 2016-09-01 |
Foreign References:
| JP2018011272A | 2018-01-18 | |||
| US20160156863A1 | 2016-06-02 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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