Title:
SOLID-STATE IMAGING ELEMENT AND ELECTRONIC INFORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/029772
Kind Code:
A1
Abstract:
A high-quality images with suppressed noise and residual images are obtained by
completely transferring signal charges to a charge detecting section from a
photoelectric converting/accumulating section. At a unit pixel section (10)
of an MOS type image sensor, a photoelectric converting/accumulating section (13)
has an overlapping section to a transfer gate electrode (18), and a pinning layer
(16) is offset formed to the photoelectric converting/accumulating section (13).
Thus, formation of a potential barrier can be suppressed at a charge transfer path
from the photoelectric converting/accumulating section (13) to a charge detecting
section (23) (FD). Furthermore, an interface of a p-type well region (14) configuring
the channel region of a transfer transistor (2) is retracted from a side end surface
of a photoelectric converting/storing section of the transfer gate electrode
(18) by a prescribed value to the side of the charge detecting section (23) (FD),
and as a result, formation of charge reservoir causing residual images is eliminated.
Thus, the signal charges from a photodiode (1) to the charge detecting section
(FD) can be completely transferred.
Inventors:
KONISHI TAKEFUMI
Application Number:
PCT/JP2007/067150
Publication Date:
March 13, 2008
Filing Date:
September 03, 2007
Export Citation:
Assignee:
SHARP KK (JP)
KONISHI TAKEFUMI
KONISHI TAKEFUMI
International Classes:
H01L27/146; H01L31/10; H04N5/335; H04N5/357; H04N5/369; H04N5/374; H04N101/00
Domestic Patent References:
| WO2005013370A1 | 2005-02-10 |
Foreign References:
| JP2001237407A | 2001-08-31 | |||
| JP2004356157A | 2004-12-16 |
Attorney, Agent or Firm:
YAMAMOTO, Shusaku et al. (Crystal Tower2-27, Shiromi 1-chome, Chuo-k, Osaka-shi Osaka 15, JP)
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