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Title:
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/190759
Kind Code:
A1
Abstract:
An imaging pixel of this solid-state imaging element comprises: a charge storage portion (102) that is a diffused region formed in a substrate (100); a gate electrode (103) that is formed on the substrate at a side of the charge storage portion; an insulating film (300) that is formed on the charge storage portion; and a contact plug (200) that is formed of a semiconductor and penetrates through the insulating film to be connected to the charge storage portion. The lower part of the contact plug is embedded in the insulating film, while the upper part of the contact plug is exposed from the insulating film. A silicide (210) is formed on the surface of the upper part of the contact plug, while no silicide is formed on the charge storage portion nor on the gate electrode.

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Inventors:
SAKAIDA RYOTA
TAKAHASHI NOBUYOSHI
SAEKI KOSAKU
Application Number:
PCT/JP2013/002750
Publication Date:
December 27, 2013
Filing Date:
April 23, 2013
Export Citation:
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Assignee:
PANASONIC CORP (JP)
International Classes:
H01L27/146; H01L21/28; H01L21/3205; H01L21/336; H01L21/768; H01L23/522; H01L23/532; H01L29/78; H04N5/357; H04N5/374
Foreign References:
JP2004095636A2004-03-25
JP2012064815A2012-03-29
JP2004119794A2004-04-15
JP2009259872A2009-11-05
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
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