SOLID-STATE IMAGING ELEMENT

WIPO Patent Application WO/2021/192600

A1

A solid-state imaging element (1) is provided with: an optical black (OB) region (R1) in which a photoelectric conversion unit (12) for detecting a black label is formed in a semiconductor substrate (11); a light-shielding layer (14) formed above the OB region (R1); a first light-shielding wall (21) formed, to the side of the OB region (R1), so as to extend downwards from the light-shielding layer (14) in a hanging wall shape; and a second light-shielding wall (22) formed, to the side of the OB region (R1), so as to extend upwards from the semiconductor substrate (11) in a vertical wall shape. In a direction directed away from the OB region (R1), the first light-shielding wall (21) and the second light-shielding wall (22) are disposed at mutually different positions, and a wiring part (13) from the OB region (R1) passes between the first light-shielding wall (21) and the second light-shielding wall (22).

JP6361779	Manufacturing method of epitaxial silicon wafer, manufacturing method of epitaxial silicon wafer, and solid-state image sensor
JPH09312725	IMAGE SENSOR MODULE
JPS6149463	ONE-DIMENSIONAL IMAGE SENSOR

TAMARU MASAKI
TORAZAWA NAOKI
SAKATA YUSUKE
KOYAMA SHINZO
MORI MITSUYOSHI

PCT/JP2021/003107

September 30, 2021

January 28, 2021

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PANASONIC IP MAN CO LTD (JP)

H01L27/146

JP2019012739A	2019-01-24
JP2009099626A	2009-05-07
JP2008153250A	2008-07-03
JP2006093687A	2006-04-06
JP2011129780A	2011-06-30
JP2011216865A	2011-10-27
JP2009200462A	2009-09-03

SHIBANO, Masanori et al. (JP)

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