Title:
SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/095833
Kind Code:
A1
Abstract:
A solid-state imaging element and method of manufacturing the same is provided to effectively achieve both suppression of sensitivity variations between the pixels due to the anisotropy of the color mixture and an improvement in layout efficiency. The solid-state imaging element includes a plurality of transistors; and a plurality of pixels arranged two-dimensionally. In the imaging element adjacent pixels may share at least one transistor. In the imaging device each pixel includes a first and a second silicon region and a first and a second silicon oxide film region, each silicon oxide film region surrounds a respective silicon region in a plan view.
Inventors:
BANDO MASASHI (JP)
Application Number:
PCT/JP2023/038366
Publication Date:
May 10, 2024
Filing Date:
October 24, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146
Domestic Patent References:
| WO2016163240A1 | 2016-10-13 |
Foreign References:
| US20190237499A1 | 2019-08-01 | |||
| CN114567734A | 2022-05-31 | |||
| EP3882973A1 | 2021-09-22 |
Attorney, Agent or Firm:
MIYAJIMA Manabu (JP)
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