SONOS STRUCTURE, PROGRAMMING METHOD AND FORMING METHOD THEREFOR, AND MEMORY - SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP

Title:

SONOS STRUCTURE, PROGRAMMING METHOD AND FORMING METHOD THEREFOR, AND MEMORY

Document Type and Number:

WIPO Patent Application WO/2024/093374

Kind Code:

A1

Abstract:

An SONOS structure, a programming method and forming method therefor, and a memory. The SONOS structure may comprise: a semiconductor substrate; a dielectric layer, which is located on a surface of the semiconductor substrate; a charge trapping layer, which is located on a surface of the dielectric layer; a tunneling dielectric layer, which covers the charge trapping layer; and a conductive layer, which is located on a surface of the tunneling dielectric layer, wherein the thickness of the dielectric layer is greater than the thickness of the tunneling dielectric layer. The present invention can effectively improve the storage reliability.

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Inventors:

DING YANG (CN)
ZHANG KEGANG (CN)

Application Number:

PCT/CN2023/108519

Publication Date:

May 10, 2024

Filing Date:

July 21, 2023

Export Citation:

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Assignee:

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP (CN)

International Classes:

H10B43/30

Foreign References:

CN108630700A	2018-10-09
US6709928B1	2004-03-23
US6436768B1	2002-08-20

Attorney, Agent or Firm:

UNITALEN ATTORNEYS AT LAW CO., LTD. (CN)

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