Title:
SOT-MRAM AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/060627
Kind Code:
A1
Abstract:
An SOT-MRAM and a manufacturing method therefor. The SOT-MRAM comprises a substrate (10) and a plurality of memory units provided on the substrate (10). Each memory unit comprises an SOT layer deposited on the substrate (10), and magnetic tunnel junctions (12) provided on the SOT layer. The SOT-MRAM further comprises an anti-ferromagnetic insulating layer (13) at least surrounding and wrapping a side surface of a free layer in each magnetic tunnel junction (12), and a magnetic moment direction of the anti-ferromagnetic insulating layer (13) is parallel to the direction of a writing current in the SOT layer. The anti-ferromagnetic insulating layer (13) at least surrounding and wrapping the side surface of the free layer in each magnetic tunnel junction (12) is additionally provided on the side surface of each magnetic tunnel junction (12), and the magnetic moment direction of the anti-ferromagnetic insulating layer (13) is parallel to the direction of the writing current, such that an in-plane magnetic field can be provided for the free layer, the in-plane magnetic field is used for non-external magnetic field reversal of the SOT-MRAM, and the problem of the SOT-MRAM not being able to be integrated on a large scale due to the fact that an external magnetic field needs to be applied in a writing process is solved. Moreover, the additionally added anti-ferromagnetic insulating layer (13) is provided around the magnetic tunnel junction (12), thereby protecting the magnetic tunnel junctions (12) from being affected by ambient environment.
Inventors:
BI CHONG (CN)
LOU KAIHUA (CN)
LIU MING (CN)
LOU KAIHUA (CN)
LIU MING (CN)
Application Number:
PCT/CN2021/124434
Publication Date:
April 20, 2023
Filing Date:
October 18, 2021
Export Citation:
Assignee:
INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN)
International Classes:
H01L43/08
Foreign References:
| CN111740011A | 2020-10-02 | |||
| CN112652706A | 2021-04-13 | |||
| CN111129290A | 2020-05-08 | |||
| US20200212291A1 | 2020-07-02 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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