SPIN LOGIC DEVICE, CIRCUIT, CONTROL METHOD AND PROCESSING APPARATUS

WIPO Patent Application WO/2021/102750

A1

A spin logic device, relating to the technical field of circuits. The spin logic device comprises a first ferromagnetic layer, a first potential barrier layer, a fixed layer, a second potential barrier layer and a second ferromagnetic layer, which are successively arranged in a stacked manner, wherein the first ferromagnetic layer and the second ferromagnetic layer comprise a magnetic material; the first potential barrier layer and the second potential barrier layer comprise a metal oxide material; and the magnetization direction of the fixed layer is a fixed direction. The logic device relies on a magnetic tunnel junction and achieves a low current density, a high operating speed and low power consumption. The present invention further relates to a spin logic circuit, a control method and a processing apparatus.

WO/2017/222723	HIGH ASPECT RATIO VERTICAL INTERCONNECT ACCESS (VIA) INTERCONNECTIONS IN MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS
WO/2021/262241	MEMORY DEVICE CONTAINING DUAL ETCH STOP LAYERS FOR SELECTOR ELEMENTS AND METHOD OF MAKING THE SAME
WO/2012/153926	SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT

QIN JIANYING (CN)

PCT/CN2019/121323

June 03, 2021

November 27, 2019

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HUAWEI TECH CO LTD (CN)

G11C11/16; H01L43/08

CN101076865A	2007-11-21
CN101076865A	2007-11-21
CN108987031A	2018-12-11
CN109560193A	2019-04-02
US20060012926A1	2006-01-19

BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)

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