SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY, MANUFACTURING METHOD THEREFOR, AND MEMORY DEVICE

WIPO Patent Application WO/2022/095033

A1

Provided in the present application are a spin orbit torque magnetic random access memory, a manufacturing method therefor, and a storage device, which relate to the field of memories. Provided is a spin orbit torque magnetic random access memory without an external magnetic field. The spin orbit torque magnetic random access memory comprises a spin orbit torque provision layer and a perpendicular magnetic tunneling junction, wherein the magnetic tunneling junction comprises a free layer, a tunneling layer and a reference layer, which are arranged in a stacked manner; and the spin orbit torque provision layer comprises a first surface and a second surface, which are opposite each other, with the free layer being arranged on the first surface of the spin orbit torque provision layer. The spin orbit torque magnetic random access memory further comprises an insulating dielectric layer, which is arranged on the first surface or the second surface of the spin orbit torque provision layer, wherein a first via hole and a second via hole are provided in regions, located on two opposite sides of the perpendicular magnetic tunneling junction, in the insulating dielectric layer, and the first via hole and the second via hole are filled with a ferromagnetic material.

QIN QING (CN)
ZHOU XUE (CN)
LIU XI (CN)

PCT/CN2020/127534

May 12, 2022

November 09, 2020

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HUAWEI TECH CO LTD (CN)

G11C11/16; H01L43/08

CN111490156A	2020-08-04
CN103354952A	2013-10-16
US8928100B2	2015-01-06
US20190115060A1	2019-04-18

BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)

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