Title:
SPIN RANDOM ACCESS MEMORY AND METHOD
Document Type and Number:
WIPO Patent Application WO/2021/047591
Kind Code:
A1
Abstract:
Provided in the present application are a spin random access memory and a method. A second magnetic tunnel junction is provided in each storage partition, the second magnetic tunnel junction is kept in an anti-parallel state by means of current control, and thus, the temperature of each storage partition can be measured and then transmitted to a control circuit, so that the control circuit outputs a read-write control signal on the basis of the received temperature, so as to control a read voltage and a write voltage, that is, when the temperature is too high, the write voltage is reduced and the read voltage is increased, and vice versa. Thus, the problem of write operation failure of the spin random access memory in a low-temperature area and the problem of a read error of the spin random access memory in a high-temperature area are solved, the reliable working range of the spin random access memory is enlarged, and the service life of the spin random access memory is prolonged.
Inventors:
ZHAO WEISHENG (CN)
YAN SHAOHUA (CN)
CAI WENLONG (CN)
CAO KAIHUA (CN)
DENG ERYA (CN)
YAN SHAOHUA (CN)
CAI WENLONG (CN)
CAO KAIHUA (CN)
DENG ERYA (CN)
Application Number:
PCT/CN2020/114512
Publication Date:
March 18, 2021
Filing Date:
September 10, 2020
Export Citation:
Assignee:
UNIV BEIHANG (CN)
International Classes:
G11C11/16
Foreign References:
| CN110675901A | 2020-01-10 | |||
| CN110660425A | 2020-01-07 | |||
| CN110660424A | 2020-01-07 | |||
| CN109585644A | 2019-04-05 | |||
| CN107134292A | 2017-09-05 | |||
| CN104778967A | 2015-07-15 | |||
| US20150287450A1 | 2015-10-08 |
Attorney, Agent or Firm:
BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD. (CN)
Download PDF:
Previous Patent: SIGNALING OF SUBPICTURE STRUCTURES
Next Patent: CERMET HEATING MATERIAL AND PREPARATION METHOD THEREOF
Next Patent: CERMET HEATING MATERIAL AND PREPARATION METHOD THEREOF