SPIN SWITCH AND MAGNAETIC STORAGE ELEMET USING IT

WIPO Patent Application WO/2002/058167

A1

A spin switch driven under a voltage, comprising a ferromagnetic element, a magnetic semiconductor magnetically coupled with the element, an antiferromagnetic element magnetically coupled with the magnetic semiconductor, and an electrode connected with the magnetic semiconductor via an insulator, wherein the magnetic semiconductor reversibly changes between ferromagnetic and paramagnetic with a change in an electrode potential, and a ferromagnetic element formed when the magnetic semiconductor is changed to ferromagnetic is magnetized in a specified direction by a magnetic coupling with the magnetic semiconductor .

MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SATOMI MITSUO (JP)
SUGITA YASUNARI (JP)

PCT/JP2002/000328

July 25, 2002

January 18, 2002

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MATSUSHITA ELECTRIC IND CO LTD (JP)
MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SATOMI MITSUO (JP)
SUGITA YASUNARI (JP)

G11C11/15; G11C11/16; H01F10/32; H01L21/8246; H01L27/22; H01L29/66; (IPC1-7): H01L43/08; H01L27/105; G01R33/09; G11B5/39; H01F10/193

JPH10284765A	1998-10-23
JPH1187796A	1999-03-30
JPH0992903A	1997-04-04
JP2000332317A	2000-11-30
JP2000137906A	2000-05-16

H. OHNO et al., "New III-V diluted magnetic semiconductors", Journal of Applied Physics, 15 April, 1991 (15.04.91), Vol. 69, No. 8, pages 6103-6108

IKEUCHI SATO & PARTNER PATENT ATTORNEYS (OAP TOWER 8-30, Tenmabashi 1-chom, Kita-ku Osaka-shi Osaka, JP)

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