SPUTTERING CATHODE, SPUTTERING DEVICE, AND METHOD FOR PRODUCING FILM-FORMED BODY

WIPO Patent Application WO/2017/169029

A1

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

JP2023066486	MAGNETRON SPUTTERING APPARATUS CATHODE UNIT AND MAGNETRON SPUTTERING APPARATUS
JP2003347282	METHOD FOR PLASMA TREATMENT AND APPARATUS THEREFOR
JPH01242775	FORMATION OF THIN FILM AND DEVICE THEREFOR

IWATA HIROSHI (JP)
NEDU TOSHIYUKI (JP)
TAKAKUWA YUTA (JP)
OKADA NAOYA (JP)
SATO IPPEI (JP)
SHIBATA NAONORI (JP)
HASHIMOTO KEIICHI (JP)

PCT/JP2017/002463

October 05, 2017

January 25, 2017

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KEIHIN RAMTECH CO LTD (JP)

C23C14/34; H05H1/46

WO2012133704A1

2012-10-04

JPS5855566A	1983-04-01
US20080011600A1	2008-01-17
JP2005048227A	2005-02-24
JPH108246A	1998-01-13
JP2008019478A	2008-01-31
JP2015007283A	2015-01-15

See also references of EP 3438322A4

MORI, Koh-ichi (JP)

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