Title:
SPUTTERING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/230857
Kind Code:
A1
Abstract:
A sputtering device (10) is provided with: a first target holder (111) and a second target holder (112) respectively holding a first target (T1) and a second target (T2) with surfaces thereof opposing each other; a substrate holder (16) provided laterally of a plasma generating region (R) between the first target (T1) and the second target (T2) respectively being held by the first target holder (111) and the second target holder (112); a first main magnetic field generating portion (121) and a second main magnetic field generating portion (122) which are respectively provided on the back side of the first target holder (111) and the second target holder (112), in which magnets are arranged with mutually opposite poles thereof opposing each other, and which respectively generate a first main magnetic field and a second main magnetic field on the surfaces of the first target (T1) and the second target (T2) being held by the respective holders; a power supply for applying predetermined potentials to the first target holder (111) and the second target holder (112) to generate an electric field in the plasma generating region (R); a high frequency electromagnetic field generating portion (17) provided in the plasma generating region (R) on the side opposing the substrate holder (16) across the plasma generating region (R) to generate a high frequency electromagnetic field in the plasma generating region (R); and a plasma raw material gas introducing portion (15) for introducing a plasma raw material gas into the plasma generating region (R). There is no means for generating a magnetic field at the ends of the first target holder (111) and the second target holder (112) on the side of the high frequency electromagnetic field generating portion (17).
Inventors:
OGAWA SOICHI (JP)
EBE AKINORI (JP)
KONDO YUSUKE (JP)
KAKEHI YOSHIHARU (JP)
SATOH KAZUO (JP)
IKUHARA SHIRO (JP)
IWASAKI SHINICHI (JP)
EBE AKINORI (JP)
KONDO YUSUKE (JP)
KAKEHI YOSHIHARU (JP)
SATOH KAZUO (JP)
IKUHARA SHIRO (JP)
IWASAKI SHINICHI (JP)
Application Number:
PCT/JP2022/018834
Publication Date:
November 03, 2022
Filing Date:
April 26, 2022
Export Citation:
Assignee:
EMD CORP (JP)
OSAKA RES INST IND SCIENCE & TECH (JP)
OGAWA SOICHI (JP)
OSAKA RES INST IND SCIENCE & TECH (JP)
OGAWA SOICHI (JP)
International Classes:
H05H1/46; C23C14/34; C23C14/35
Foreign References:
| JP2018053272A | 2018-04-05 | |||
| JPH01298154A | 1989-12-01 | |||
| JPH07238371A | 1995-09-12 | |||
| JP2008127582A | 2008-06-05 |
Other References:
平田豊明ほか, 対向ターゲット式スパッタ法によるAl薄膜の特性, 金属表面技術, 1987, vol. 38, no. 9, pages 450-452, https://www.jstage.jst.go.jp/article/sssj2008/30/0/30_0_130/_pdf/-char/ja, particularly, fig. 2, (HIRATA, Toyoaki et al. Properties of Aluminum Thin Films Prepared by Facing Targets Sputtering System. Kinzoku Hyomen Gijutsu.)
Attorney, Agent or Firm:
KYOTO INTERNATIONAL PATENT LAW OFFICE (JP)
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