Title:
SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/220675
Kind Code:
A1
Abstract:
Provided are a sputtering target and a method for manufacturing the same, whereby generation of particles can be reduced, and manufacturing yield can be enhanced in a process of forming a magnetic thin film. A sputtering target having an Fe-Pt-based alloy phase and a non-magnetic phase, wherein the sputtering target contains 1-50 at% C as an atom number ratio, and the sputtering target has a diffraction peak originating from diamond in XRD measurement thereof.
Inventors:
SHIMOJUKU AKIRA (JP)
Application Number:
PCT/JP2018/046862
Publication Date:
November 21, 2019
Filing Date:
December 19, 2018
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; B22F1/12; C22C1/05; C22C19/07; C22C26/00; C22C38/00; C22C32/00
Domestic Patent References:
| WO2014132746A1 | 2014-09-04 | |||
| WO2013190943A1 | 2013-12-27 | |||
| WO2012133166A1 | 2012-10-04 | |||
| WO2011016365A1 | 2011-02-10 |
Foreign References:
| US20070172706A1 | 2007-07-26 | |||
| US20100200124A1 | 2010-08-12 |
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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