SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS FOR PRODUCING THESE

Title:

SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS FOR PRODUCING THESE

Document Type and Number:

WIPO Patent Application WO/2014/061271

Kind Code:

A1

Abstract:

Provided is a sputtering target which consists of an oxide containing an indium element (In), tin element (Sn), zinc element (Zn) and aluminum element (Al) and which contains a homologous structure compound represented by In2O3(ZnO)n (n is 2-20) and a spinel structure compound represented by Zn2SnO4.

Inventors:

EBATA KAZUAKI (JP)
TAJIMA NOZOMI (JP)

Application Number:

PCT/JP2013/006146

Publication Date:

April 24, 2014

Filing Date:

October 16, 2013

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Assignee:

IDEMITSU KOSAN CO (JP)

International Classes:

C23C14/34; C04B35/00; C04B35/453; C23C14/08; H01L21/363; H01L29/786

Domestic Patent References:

WO2011132418A1	2011-10-27
WO2009142289A1	2009-11-26

Foreign References:

JP2008243928A	2008-10-09
JP2008163441A	2008-07-17
JP2011108873A	2011-06-02

Attorney, Agent or Firm:

WATANABE, Kihei et al. (JP)
Kihei Watanabe (JP)

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