Title:
SPUTTERING TARGET AND PROCESS FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/145818
Kind Code:
A1
Abstract:
A sputtering target characterized by further containing 0.1 to 20wt% (in terms of the weight of oxide) of a metal which can form a low-melting oxide having a melting point of up to 1000°C relative to an elemental composition which has an Al content of 0.2 to 3.0mol% in terms of Al2O3 and a content of Mg and/or Si of 1 to 27mol% in terms of MgO and/or SiO2 with the balance being Zn in an amount in terms of ZnO. The present invention provides: a target which is free from sulfur and has such a low bulk resistance as to permit DC sputtering and which is useful in forming an optical thin film having a low refractive index; and a process for manufacturing the same. The target itself has a high density and therefore enables stable sputtering with little abnormal discharge. A thin film formed by a sputtering method using the target exhibits a high transmittance and is composed of a sulfur-free system, so that a reflecting or recording layer adjacent to the thin film is less susceptible to degradation. Thus, the target is useful in forming a thin film for an optical information recording medium. The sputtering target can improve the characteristics of an optical information recording medium, reduce the facility cost, and enhance the speed of film formation, thus achieving a remarkably improved throughput.
Inventors:
NARA ATSUSHI (JP)
SATOH KAZUYUKI (JP)
SATOH KAZUYUKI (JP)
Application Number:
PCT/JP2013/051042
Publication Date:
October 03, 2013
Filing Date:
January 21, 2013
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C04B35/453; G11B7/24; G11B7/254; G11B7/257
Domestic Patent References:
| WO2006129410A1 | 2006-12-07 |
Foreign References:
| JP2009228034A | 2009-10-08 | |||
| JPH11302835A | 1999-11-02 |
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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