Title:
SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/173517
Kind Code:
A1
Abstract:
This sputtering target has a molybdenum content of 3 mol% to 25 mol% and a silicon content of 75 mol% to 97 mol%. The sputtering target comprises a silicon phase in which the average particle diameter of the silicon particles is 2.0 µm or less and a molybdenum silicide phase in which the average particle diameter of the molybdenum silicide particles is 2.5 µm or less. The average number of holes with a major axis of at least 0.3 µm that are present in the silicon phase is no more than 10 in a 90 µm x 125 µm area.
Inventors:
URABE HIRONARI (JP)
IKEDA MAKOTO (JP)
UMEZAWA TEIICHIRO (JP)
UCHIDA MARIKO (SG)
KAWASUMI ISAO (SG)
ANG CHOR BOON (SG)
IKEDA MAKOTO (JP)
UMEZAWA TEIICHIRO (JP)
UCHIDA MARIKO (SG)
KAWASUMI ISAO (SG)
ANG CHOR BOON (SG)
Application Number:
PCT/JP2018/003909
Publication Date:
September 27, 2018
Filing Date:
February 06, 2018
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO (JP)
HOYA CORP (JP)
HOYA ELECTRONICS SINGAPORE PTE LTD (SG)
HOYA CORP (JP)
HOYA ELECTRONICS SINGAPORE PTE LTD (SG)
International Classes:
C23C14/34; B22F1/00; B22F3/14; B22F3/15; C01B33/02; C01B33/06; C22C27/04
Domestic Patent References:
| WO1995004167A1 | 1995-02-09 |
Foreign References:
| JP2005200688A | 2005-07-28 | |||
| JP2004204278A | 2004-07-22 |
Attorney, Agent or Firm:
SHOWA INTERNATIONAL PATENT FIRM (JP)
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