Title:
SPUTTERING TARGET OF SINTERED SB-TE-BASED ALLOY
Document Type and Number:
WIPO Patent Application WO/2015/146394
Kind Code:
A1
Abstract:
A sputtering target of a sintered Sb-Te-based alloy which is a sputtering target having an Sb content of 10-60 at% and a Te content of 20-60 at%, the remainder comprising one or more elements selected from among Ag, In, and Ge and unavoidable impurities, characterized in that the oxides have an average grain diameter of 0.5 µm or smaller. The sputtering target of a sintered Sb-Te-based alloy has an improved structure so that the occurrence of arcing during sputtering is prevented and that a film to be deposited by the sputtering has improved thermal stability.
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Inventors:
KOIDO YOSHIMASA (JP)
Application Number:
PCT/JP2015/054712
Publication Date:
October 01, 2015
Filing Date:
February 20, 2015
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C22C1/04; C22C12/00; C22C28/00; C22C32/00; B22F1/00; B22F3/14; B22F9/08
Domestic Patent References:
| WO2011136120A1 | 2011-11-03 | |||
| WO2009107498A1 | 2009-09-03 |
Foreign References:
| JP2011026679A | 2011-02-10 |
Other References:
See also references of EP 3048184A4
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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