Title:
SPUTTERING TARGET WITH REDUCED PARTICLE GENERATION AND METHOD FOR PRODUCING THE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2011/077933
Kind Code:
A1
Abstract:
Disclosed is a sputtering target with reduced particle generation, which is characterized by having a target surface wherein an intermetallic compound, an oxide, a carbide, a carbonitride and other non-ductile substance are present in a very ductile matrix phase in an amount of 1-50% by volume, said target surface having a defect area ratio of 0.5% or less. Also disclosed is a method for producing the sputtering target. The target surface, in which a plurality of non-ductile substances are present, is improved, and the sputtering target can be prevented from or suppressed in generation of nodules and particles during the sputtering. The surface processing method is capable of providing the sputtering target.
Inventors:
KOIDE KEI (JP)
Application Number:
PCT/JP2010/071786
Publication Date:
June 30, 2011
Filing Date:
December 06, 2010
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
KOIDE KEI (JP)
KOIDE KEI (JP)
International Classes:
C22C1/10; C23C14/34; G11B5/851; C22C32/00
Domestic Patent References:
| WO2009123055A1 | 2009-10-08 |
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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