Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/187244
Kind Code:
A1
Abstract:
Provided is a sputtering target with which few particles are generated throughout the life of the sputtering target. This sputtering target, which comprises 50-90 at% Co and 10-50 at% Ru, with the remainder being unavoidable impurities, is characterized in that among the impurities oxygen exceeds 10000 wt ppm and carbon is no greater than 50 wt ppm.

More Like This:
WO/2003/060181BIOACTIVE DEVICE HAVING SURFACE WITH ALLOYED LAYER OF CALCIUM PHOSPHATE COMPOUNDS AND METHOD OF MAKING
WO/2008/153690HIGH RATE SPUTTERING APPARATUS AND METHOD
JPH06346235VACUUM COATING APPARATUS
Inventors:
FURUYA YUKI (JP)
Application Number:
PCT/JP2018/036509
Publication Date:
October 03, 2019
Filing Date:
September 28, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C22C19/07; G11B5/851
Domestic Patent References:
WO2017141557A12017-08-24
Foreign References:
CN104032270A2014-09-10
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: SPUTTERING TARGET AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM

Next Patent: LIDDED CONTAINER AND CONTAINER