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Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2021/019990
Kind Code:
A1
Abstract:
The purpose of the present disclosure is to provide a sputtering target with enhanced conductivity, for example, a sputtering target that enhances the productivity when a film is formed by using a DC sputtering apparatus. A sputtering target according to the present disclosure is characterized in that, in an aluminum matrix, (1) a material or phase containing aluminum, and further containing one of or both a rare earth element and a titanium group element, or (2) a material or phase containing one of or both a rare earth element and a titanium group element is present at a content of 10-70 mol%.

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Inventors:
MARUKO TOMOHIRO (JP)
SUZUKI YU (JP)
OTOMO SHOHEI (JP)
NAKAMURA HIRONOBU (JP)
Application Number:
PCT/JP2020/025277
Publication Date:
February 04, 2021
Filing Date:
June 26, 2020
Export Citation:
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Assignee:
FURUYA METAL CO LTD (JP)
International Classes:
C23C14/34; C22C1/04; C22C14/00; C22C16/00; C22C21/00; C22C27/00; C22C28/00; C22C30/00
Domestic Patent References:
WO2018169998A12018-09-20
WO2017213185A12017-12-14
Foreign References:
JP2006111970A2006-04-27
JP2000273623A2000-10-03
JP2010204291A2010-09-16
Other References:
KAZUHIKO KANO ET AL., DENSO TECHNICAL REVIEW, vol. 17, 2012, pages 202 - 207
See also references of EP 4006198A4
Attorney, Agent or Firm:
IMASHITA, Katsuhiro et al. (JP)
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