Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2022/209170
Kind Code:
A1
Abstract:
[Problem] To provide a gallium nitride-based gallium sputtering target that has a low oxygen concentration, that is less likely to be broken during sputtering, and with which the rate of film growth by sputtering is high. [Solution] A sputtering target 1 comprising: a gallium nitride-based crystal body 2 formed of a plurality of gallium nitride-based monocrystalline particles 3 aligned in a c-axial direction that is normal to a predetermined surface 2a. The total oxygen concentration of the gallium nitride-based crystal body 2 is at most 150 ppm by mass, and the value of the oxygen concentration of the gallium nitride-based monocrystalline particles 3 as measured by dynamic SIMS is at least 2×1017cm-3.
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Inventors:
NONAKA KENTARO (JP)
ISODA YOSHINORI (JP)
IMAI KATSUHIRO (JP)
ISODA YOSHINORI (JP)
IMAI KATSUHIRO (JP)
Application Number:
PCT/JP2022/001705
Publication Date:
October 06, 2022
Filing Date:
January 19, 2022
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C23C14/34; C30B29/38
Domestic Patent References:
| WO2020075599A1 | 2020-04-16 |
Foreign References:
| JP2019194132A | 2019-11-07 | |||
| JP2014159368A | 2014-09-04 | |||
| JP2020059644A | 2020-04-16 | |||
| JP2019210210A | 2019-12-12 |
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
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