STACK PROCESS-BASED THREE-DIMENSIONAL FLASH MEMORY AND MANUFACTURING METHOD THEREFOR

Title:

STACK PROCESS-BASED THREE-DIMENSIONAL FLASH MEMORY AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2023/195684

Kind Code:

A1

Abstract:

A stack process-based three-dimensional flash memory and a manufacturing method therefor are disclosed. According to an embodiment, the three-dimensional flash memory may comprise: a first memory block including first vertical channel structures formed to extend in a vertical direction on a first substrate; a second memory block including second vertical channel structures formed to extend in a vertical direction on a second substrate; and a connection pad for connecting the first memory block and the second memory block to each other.

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Inventors:

SONG YUN HEUB (KR)

Application Number:

PCT/KR2023/004272

Publication Date:

October 12, 2023

Filing Date:

March 30, 2023

Export Citation:

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Assignee:

IUCF HYU (KR)

International Classes:

H10B43/30; H10B43/27; H10B43/40; H10B43/50

Foreign References:

KR20210154829A	2021-12-21
KR20210092359A	2021-07-26
KR20210152127A	2021-12-15
KR20190040880A	2019-04-19
KR20210058139A	2021-05-24

Attorney, Agent or Firm:

KIM, Jeong Hoon (KR)

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