Title:
STEPPED FIELD PLATES WITH PROXIMITY TO CONDUCTION CHANNEL AND RELATED FABRICATION METHODS
Document Type and Number:
WIPO Patent Application WO/2021/076367
Kind Code:
A3
Abstract:
A transistor includes a semiconductor layer structure (24), a source electrode (30) and a drain electrode (30) on the semiconductor layer structure, a gate (32) on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate (33). The field plate includes a first portion (33a) adjacent the gate and a second portion (33b) adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion (32a) of the gate. Related devices and fabrication methods are also discussed.
Inventors:
JONES EVAN (US)
ALCORN TERRY (US)
GUO JIA (US)
RADULESCU FABIAN (US)
SHEPPARD SCOTT (US)
ALCORN TERRY (US)
GUO JIA (US)
RADULESCU FABIAN (US)
SHEPPARD SCOTT (US)
Application Number:
PCT/US2020/054510
Publication Date:
May 20, 2021
Filing Date:
October 07, 2020
Export Citation:
Assignee:
CREE INC (US)
International Classes:
H01L29/778; H01L23/31; H01L29/41; H01L29/20; H01L29/423
Foreign References:
| US9741840B1 | 2017-08-22 | |||
| US20140361342A1 | 2014-12-11 | |||
| US20130127521A1 | 2013-05-23 | |||
| CN110071173A | 2019-07-30 |
Attorney, Agent or Firm:
SABAPATHYPILLAI, Rohan G. (US)
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